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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK959 description drain current C i d =2a@ t c =25 drain source voltage- : v dss =900v(min) applications designed especially for high voltage. high speed applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage (v gs =0) 900 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 2 a p tot total dissipation@tc=25 80 w t j max. operating junction temperature 80 t stg storage temperature range -55~150 pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK959 electrical characteristics (t c =25 ) symbol parameter conditions min typ. max unit (br)dss drain-source breakdown voltage v gs =0; i d = 1ma 900 v v gs(th) gate threshold voltage v ds = v gs ; i d = 1ma 2.5 3.5 5.0 v r ds(on) drain-source on-stage resistance v gs = 10v; i d =1a 8.5 i gss gate source leakage current v gs = 20v; v ds = 0 100 na i dss zero gate voltage drain current v ds =900v; v gs = 0 500 ua pdf pdffactory pro www.fineprint.cn |
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